Technical parameters/rated power: 0.2 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTA114ECA-7
|
Diodes | 功能相似 | SOT-23-3 |
Trans Digital BJT PNP 50V 100mA Automotive 3Pin SOT-23 T/R
|
||
FJV4102RMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
特点•开关应用(偏置电阻内置)•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R1=10KΩ,R2=10KΩ)•到FJV3102R补
|
||
FJV4102RMTF
|
Fairchild | 功能相似 | SOT-23-3 |
特点•开关应用(偏置电阻内置)•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R1=10KΩ,R2=10KΩ)•到FJV3102R补
|
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