Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 200 ns
Technical parameters/memory capacity: 1000000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.25 V
Technical parameters/power supply voltage (Min): 4.75 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerCap-34
External dimensions/length: 23.5 mm
External dimensions/width: 25.02 mm
External dimensions/height: 2.03 mm
External dimensions/packaging: PowerCap-34
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245YP-70
|
Maxim Integrated | 功能相似 | PowerCap-34 |
1024K Nonvolatile SRAM
|
||
DS1245YP-70
|
Dallas Semiconductor | 功能相似 |
1024K Nonvolatile SRAM
|
|||
DS1245YP-70+
|
Maxim Integrated | 类似代替 | PowerCap-34 |
MAXIM INTEGRATED PRODUCTS DS1245YP-70+ 芯片, 存储器, NVRAM
|
||
DS1245YP-70+
|
Dallas Semiconductor | 类似代替 |
MAXIM INTEGRATED PRODUCTS DS1245YP-70+ 芯片, 存储器, NVRAM
|
|||
|
|
Rochester | 类似代替 | DMA |
IC NVSRAM 1Mbit 70NS 34PCM
|
||
DS1245YP-70IND+
|
Dallas Semiconductor | 类似代替 |
IC NVSRAM 1Mbit 70NS 34PCM
|
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