Technical parameters/frequency: 80 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 450 mW
Technical parameters/gain bandwidth product: 80 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 120 @2mA, 6V
Technical parameters/rated power (Max): 450 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 450 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DFN-3
External dimensions/length: 1 mm
External dimensions/width: 0.6 mm
External dimensions/height: 0.35 mm
External dimensions/packaging: DFN-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DP0150ALP4-7B
|
Diodes | 功能相似 | XFDFN-3 |
双极晶体管 - 双极结型晶体管(BJT) General Purpose Tran X1-DFN1006-3,10K
|
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