Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.14 W
Technical parameters/input capacitance: 674 pF
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 5.2A
Technical parameters/rise time: 3.1 ns
Technical parameters/Input capacitance (Ciss): 674pF @20V(Vds)
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 12.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2140 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.95 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN4027SSD-13
|
Diodes | 类似代替 | SOIC-8 |
MOSFET-阵列-2-N-通道（双）-40V-5.4A-1.8W-表面贴装型-8-SO
|
||
DMN4034SSD-13
|
Diodes | 类似代替 | SOIC-8 |
DMN4034SSD 系列 40 V 34 mOhm 双 N-沟道 增强型 Mosfet - SOIC-8
|
||
DMP4050SSS-13
|
Diodes Zetex | 类似代替 | SOIC-8 |
DMP4050SSS 系列 40 V 4.4 A P-沟道 增强型 Mosfet - SOIC-8
|
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