Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.3 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 3.4A
Technical parameters/rise time: 1.8 ns
Technical parameters/Input capacitance (Ciss): 549pF @50V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 2.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerDI-3333-8
External dimensions/packaging: PowerDI-3333-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN10H120SFG-13
|
Diodes Zetex | 完全替代 | POWERDI-3333 |
DMN10H120SFG-13 , N沟道 MOSFET 晶体管, 5.3 A, Vds=100 V, 8针 POWERDI3333封装
|
||
DMN10H120SFG-13
|
Diodes | 完全替代 | PowerDI-3333-8 |
DMN10H120SFG-13 , N沟道 MOSFET 晶体管, 5.3 A, Vds=100 V, 8针 POWERDI3333封装
|
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