Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -130 mA
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 10 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/threshold voltage: 1.6 V
Technical parameters/input capacitance: 45.0 pF
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -130 mA
Technical parameters/Input capacitance (Ciss): 45pF @25V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Military and Aerospace, Defense
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84W-7
|
Diodes | 类似代替 | SOT-323-3 |
MOSFET P-CH 50V 130mA SC70-3
|
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