Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 600
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-523-3
External dimensions/length: 1.6 mm
External dimensions/width: 0.8 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: SOT-523-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTC144TE-7
|
Diodes Zetex | 功能相似 | SOT-523 |
TRANS PREBIAS NPN 150mW SOT523
|
||
DDTC144TE-7
|
Diodes | 功能相似 | SOT-523-3 |
TRANS PREBIAS NPN 150mW SOT523
|
||
PDTC144WU,115
|
NXP | 功能相似 | SOT-323-3 |
NXP PDTC144WU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 47 kΩ, 电阻比:2.14, 3引脚 UMT封装
|
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