Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTC115TUA-7
|
Diodes | 功能相似 | SOT-323-3 |
TRANS PREBIAS NPN 200mW SOT323
|
||
DDTC115TUA-7-F
|
Diodes | 完全替代 | SOT-23-3 |
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3Pin SOT-323 T/R
|
||
PDTC115TU,115
|
Nexperia | 类似代替 | SOT-323-3 |
PDTC115T series - NPN配电阻晶体管;R1 = 100 kOhm,R2 = 开路
|
||
PDTC115TU,115
|
NXP | 类似代替 | SOT-323-3 |
PDTC115T series - NPN配电阻晶体管;R1 = 100 kOhm,R2 = 开路
|
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