Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/rated power: 0.2 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 30
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT), Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTC114EUA-7-F
|
Diodes | 类似代替 | SOT-323-3 |
特性外延平面电路小片建设互补PNP类型有(DDTA)内置偏置电阻R1= R2无铅/ RoHS标准
|
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