Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 33 @10mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Technical parameters/power supply voltage: 50 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTA113ZUA-7
|
Diodes | 完全替代 | SOT-323-3 |
TRANS PREBIAS PNP 200mW SOT323
|
||
DTA113ZUAFRAT106
|
ROHM Semiconductor | 类似代替 | SOT-323 |
ROHM DTA113ZUAFRAT106 晶体管 双极预偏置/数字, PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率, SOT-323 新
|
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