Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0031 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 187 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/input capacitance: 10.5 nF
Technical parameters/gate charge: 120 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 185 ns
Technical parameters/Input capacitance (Ciss): 10500pF @15V(Vds)
Technical parameters/rated power (Max): 187 W
Technical parameters/descent time: 200 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 187W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.97 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB034N03LGATMA1
|
Infineon | 功能相似 | TO-263 |
INFINEON IPB034N03LGATMA1 晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
|
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