Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 15.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 83 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 1V
Technical parameters/rated power (Max): 83 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
D44VH10
|
ON Semiconductor | 功能相似 | TO-220-3 |
Trans GP BJT NPN 80V 15A 3Pin(3+Tab) TO-220AB Rail0
|
||
|
|
Motorola | 功能相似 |
Trans GP BJT NPN 80V 15A 3Pin(3+Tab) TO-220AB Rail0
|
|||
D44VH10
|
New Jersey Semiconductor | 功能相似 |
Trans GP BJT NPN 80V 15A 3Pin(3+Tab) TO-220AB Rail0
|
|||
|
|
Motorola | 类似代替 |
ON SEMICONDUCTOR D44VH10G 单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 83 W, 15 A, 35 hFE
|
|||
D44VH10G
|
ON Semiconductor | 类似代替 | TO-220 |
ON SEMICONDUCTOR D44VH10G 单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 83 W, 15 A, 35 hFE
|
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