Technical parameters/power supply voltage (DC): 8.60V (min)
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 10.7 V
Technical parameters/power supply current: 48 mA
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 970 mW
Technical parameters/descent time (Max): 25 ns
Technical parameters/rise time (Max): 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 970 mW
Technical parameters/power supply voltage: 8.6V ~ 18V
Technical parameters/power supply voltage (Max): 18 V
Technical parameters/power supply voltage (Min): 8.6 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -25℃ ~ 125℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Each
Other/Manufacturing Applications: Consumer Electronics, Imaging, Video and Vision, Communications&Networking, Secondary Side Controllers, Synchronous Rectifiers, Power Management, Communication and Networking, Imaging, Consumer Electronics, Video and Vision, Imaging, Video&Vision, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR11682STRPBF
|
IFC | 类似代替 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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