Technical parameters/rise/fall time: 21ns, 10ns
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 970 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 11.4V ~ 18V
Technical parameters/power supply voltage (Max): 18 V
Technical parameters/power supply voltage (Min): 11.4 V
Technical parameters/input voltage: 11.3V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -25℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR11662SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IR11662SPBF
|
Infineon | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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