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Model NTLGD3502N
Description Power MOSFET 20V, 5.8 A/4.6 Dual N-channel, DFN6 3 × 3mm Package Power MOSFET 20V, 5.8 A/4.6 A Dual N-channel, DFN6 3x3mm Package
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Brand: ON Semiconductor
Packaging DFN-6
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7762) Minimum order quantity(1)
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Technical parameters/drain source resistance: 60 mΩ

Technical parameters/polarity: Dual N

Technical parameters/dissipated power: 1.74 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 5.8A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: DFN-6

External dimensions/packaging: DFN-6

Other/Minimum Packaging: 3000

Compliant with standards/RoHS standards: RoHS Compliant

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