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Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0026 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 2.6 V
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 200A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 7920pF @40V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD19505KTT
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TI | 功能相似 | TO-263-3 |
TEXAS INSTRUMENTS CSD19505KTT 晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V 新
|
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