Technical parameters/drain source resistance: 0.0059 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 1510pF @15V(Vds)
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: VSON-8
External dimensions/packaging: VSON-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD17578Q5A
|
TI | 功能相似 | SON-8 |
CSD17578Q5A 30 V N 通道 NexFET™ 功率 MOSFET
|
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