Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/maximum allowable collector current: 0.6A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
SLKOR. | 功能相似 | SOT-223 |
NPN硅晶体管中央半导体CZT5551类型是NPN硅晶体管由外延平面工艺,环氧树脂模压在一个表面贴装封装,高电压放大器应用设计制造。
|
||
CZT5551
|
CJ | 功能相似 | SOT-223 |
NPN硅晶体管中央半导体CZT5551类型是NPN硅晶体管由外延平面工艺,环氧树脂模压在一个表面贴装封装,高电压放大器应用设计制造。
|
||
CZT5551
|
Central Semiconductor | 功能相似 | SOT-223 |
NPN硅晶体管中央半导体CZT5551类型是NPN硅晶体管由外延平面工艺,环氧树脂模压在一个表面贴装封装,高电压放大器应用设计制造。
|
||
|
|
Central Semiconductor | 功能相似 | SOT-223 |
SOT-223 NPN 160V 0.6A
|
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