Technical parameters/drain source resistance: 0.0064 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 8 W
Technical parameters/threshold voltage: 1.9 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1150pF @15V(Vds)
Technical parameters/rated power (Max): 8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: LGA-5
External dimensions/packaging: LGA-5
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD87384M
|
TI | 功能相似 | PTAB-5 |
同步降压 NexFET 电源块,CSD87384M
|
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