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Model CSD17579Q5A
Description CSD17579Q5A 30V N Channel NexFET ™ Power MOSFET
Product QR code
Brand: TI
Packaging VSON-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.86  yuan 1.86yuan
5+:
$ 2.5097
25+:
$ 2.3238
50+:
$ 2.1936
100+:
$ 2.1379
500+:
$ 2.1007
2500+:
$ 2.0542
5000+:
$ 2.0356
10000+:
$ 2.0077
Quantity
5+
25+
50+
100+
500+
Price
$2.5097
$2.3238
$2.1936
$2.1379
$2.1007
Price $ 2.5097 $ 2.3238 $ 2.1936 $ 2.1379 $ 2.1007
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8805) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 11.6 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 3.1 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 14A

Technical parameters/rise time: 7 ns

Technical parameters/Input capacitance (Ciss): 1030pF @15V(Vds)

Technical parameters/descent time: 1 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.1W (Ta), 36W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: VSON-8

External dimensions/length: 6 mm

External dimensions/width: 4.9 mm

External dimensions/height: 1 mm

External dimensions/packaging: VSON-8

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Supply in progress

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD17579Q5AT CSD17579Q5AT TI 类似代替 VSON-8
30V、N 沟道 NexFET MOSFET™、单路、SON5x6、13.3mΩ 8-VSONP -55 to 150

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