Technical parameters/frequency: 380 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: N-Channel, NPN
Technical parameters/dissipated power: 900 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 200 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 560
Technical parameters/rated power (Max): 900 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CPH3205-TL-E
|
ON Semiconductor | 功能相似 | SOT-23-3 |
(CPH3105 / CPH3205) PNP / NPN Epitaxial Planar Silicon Transistors
|
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