Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/Input capacitance (Cies): 6nF @10V
Technical parameters/rated power (Max): 310 W
Encapsulation parameters/installation method: Chassis
Encapsulation parameters/Encapsulation: Module
External dimensions/packaging: Module
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MG25Q6ES50A
|
Toshiba | 功能相似 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
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