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Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 20000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD44H11RLG
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11RLG 功率晶体管, NPN, 80V, D-PAK
|
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MJD44H11T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11T4G 单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE 新
|
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