Technical parameters/frequency: 6 GHz
Technical parameters/rated current: 950 mA
Technical parameters/output power: 8 W
Technical parameters/gain: 16 dB
Technical parameters/test current: 60 mA
Technical parameters/rated voltage: 100 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DFN-12
External dimensions/packaging: DFN-12
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CGHV1F006S
|
CREE | 类似代替 | DFN-12 |
RF JFET Transistors DC-18GHz 6W 40V Gain 16.5dB GaN
|
||
CGHV1F006S
|
CREE | 类似代替 | DFN-12 |
RF JFET Transistors DC-18GHz 6W 40V Gain 16.5dB GaN
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review