Technical parameters/forward voltage: 1.1V @1A
Technical parameters/Maximum reverse voltage (Vrrm): 200V
Technical parameters/forward current: 1 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CBR1-D020LEADFREE
|
Central Semiconductor | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4
|
|||
CBR1F-D020
|
Central Semiconductor | 类似代替 | DIP-4 |
200V 1A
|
||
DB1B
|
Harris | 功能相似 | BR |
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon
|
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