Technical parameters/frequency: 2 MHz
Technical parameters/power supply voltage (DC): 1.80V (min)
Technical parameters/power supply current: 1 mA
Technical parameters/clock frequency: 2 MHz
Technical parameters/memory capacity: 500 B
Technical parameters/access time (Max): 250 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 1.8V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 1.8 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Computer Systems, Communications Systems, Automotive Systems, Consumer Systems, Industrial Systems
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CAT93C66VE-GT3
|
ON Semiconductor | 完全替代 | SOIC-8 |
4 KB Microwire串行EEPROM CMOS 4-Kb Microwire Serial CMOS EEPROM
|
||
CAT93C66VI-GT3
|
ON Semiconductor | 完全替代 | SOIC-8 |
ON SEMICONDUCTOR CAT93C66VI-GT3. 芯片, 存储器, EEPROM, 4Kb, 串行口, 2MHZ, SOIC-8
|
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