Technical parameters/rated power: 192 W
Technical parameters/load current: 15 A
Technical parameters/forward voltage: 1.8V @15A
Technical parameters/dissipated power: 192 W
Technical parameters/forward current: 41 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/forward voltage (Max): 3 V
Technical parameters/forward current (Max): 41 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/length: 10.41 mm
External dimensions/width: 4.69 mm
External dimensions/height: 15.62 mm
External dimensions/packaging: TO-220-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
C4D20120D
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|||
GB20SLT12-247
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GeneSiC Semiconductor | 功能相似 | TO-247-2 |
GENESIC SEMICONDUCTOR GB20SLT12-247 Silicon Carbide Schottky Diode, SiC, 1200V Series, Single, 1.2kV, 20A, 112NC, TO-247AC
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