Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 13.25 V
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/temperature coefficient: 9.4 mV/K
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Shanghai Lunsure Electronic | 功能相似 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
|||
|
|
Panjit | 功能相似 | SOT-23 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
|
|
Rectron | 功能相似 | SOT-23 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
BZX84C13
|
FMS | 功能相似 | SOT-23-3 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
BZX84C13
|
Diotec Semiconductor | 功能相似 | SOT-23 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
BZX84C13
|
Central Semiconductor | 功能相似 | SOT-23 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
BZX84C13
|
Diodes | 功能相似 | SOT-23 |
Diode: Zener; 0.3W; 13V; SMD; tape; SOT23
|
||
BZX84C13-V
|
KEC | 功能相似 | SOT-23 |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE
|
||
|
|
Blue Rocket Electronics | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
Vishay Semiconductor | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
FMS | 功能相似 | SOT-23-3 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
EIC | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
Micro Commercial Components | 功能相似 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
|||
BZX84C15
|
Rectron Semiconductor | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
Diodes | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
Diotec Semiconductor | 功能相似 | SOT-23-3 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C15
|
Won-Top Electronics | 功能相似 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
|||
BZX84C15
|
NXP | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
|
|
Continental Device | 功能相似 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
|||
|
|
先科ST | 功能相似 | SOT-23-3 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C18
|
Diotec Semiconductor | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
|
|
Won-Top Electronics | 功能相似 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
|||
BZX84C18
|
CJ | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C18
|
SMC Diode Solutions | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX84C18
|
Vishay Semiconductor | 功能相似 | SOT-23 |
350mW,BZX84C 系列,Fairchild Semiconductor 齐纳电压容差为 5% 表面安装外壳:SOT-23 ### 齐纳二极管,Fairchild Semiconductor
|
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