Technical parameters/breakdown voltage: 6.00 V
Technical parameters/number of pins: 2
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 5.6 V
Technical parameters/forward voltage (Max): 1.5V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 3.9 mm
External dimensions/packaging: DO-35-2
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Packaging Methods: Tape & Box (TB)
Other/Minimum Packaging: 10000
Other/Manufacturing Applications: Vehicle use, signal processing
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX55C5V6 R0
|
Taiwan Semiconductor | 类似代替 | DO-35 |
500mW，BZX55C 系列，Taiwan Semiconductor ### 齐纳二极管，Taiwan Semiconductor
|
||
BZX55C5V6RL
|
TAK Cheong | 类似代替 | DO-35 |
DO-35 5.6V 0.5W(1/2W)
|
||
|
BZX55C5V6RL
|
ON Semiconductor | 类似代替 | DO-35 |
DO-35 5.6V 0.5W(1/2W)
|
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BZX79-C5V6
|
NXP | 功能相似 | DO-35 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
BZX79-C5V6
|
Silicon Standard | 功能相似 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
BZX79-C5V6
|
ON Semiconductor | 功能相似 | DO-35 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
BZX79-C5V6
|
Good-Ark Electronics | 功能相似 | DO-35 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
BZX79-C5V6
|
VISHAY | 功能相似 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
BZX79-C5V6
|
Philips | 功能相似 |
NXP BZX79-C5V6 单管二极管 齐纳, 5.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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