Technical parameters/capacitors: 90 pF
Technical parameters/tolerances: ±5 %
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 830 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 10 V
Technical parameters/forward voltage (Max): 900mV @10mA
Technical parameters/rated power (Max): 375 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 375 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-123F
External dimensions/length: 2.7 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOD-123F
Physical parameters/operating temperature: -65℃ ~ 150℃
Physical parameters/temperature coefficient: 6.25 mV/K
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZT52H-B10,115
|
NXP | 类似代替 | SOD-123F |
NXP BZT52H-B10,115 单管二极管 齐纳, 10 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
|
||
BZT52H-C10
|
NXP | 完全替代 | SOD-123F |
NXP BZT52H-C10 单管二极管 齐纳, 10 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
|
||
PUMH2,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMH2,115 双 NPN 数字晶体管, 100 mA, Vce=50 V, 47 kΩ, 电阻比:1, 6引脚 UMT封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review