Technical parameters/number of pins: 2
Technical parameters/dissipated power: 3.25 W
Technical parameters/voltage regulation value: 20 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 18.8 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-57
External dimensions/packaging: SOD-57
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Automotive, Industrial, General Motors
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Gaomi Xinghe Electronics | 功能相似 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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Central Semiconductor | 功能相似 | 2 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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Diotech Electronics | 功能相似 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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EIC | 功能相似 | DO-15 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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Vishay Semiconductor | 功能相似 | CASE 7 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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1N5357B
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Multicomp | 功能相似 | DO-201AE |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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1N5357B
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Galaxy Semi-Conductor | 功能相似 |
MULTICOMP 1N5357B 单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
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