Technical parameters/breakdown voltage: 33.0 V
Technical parameters/dissipated power: 2.3 W
Technical parameters/test current: 25 mA
Technical parameters/voltage regulation value: 33 V
Technical parameters/regulated current: 5-100mA
Technical parameters/forward voltage (Max): 1.2V @200mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C33P-GS18
|
Vishay Semiconductor | 功能相似 | DO-219AB |
齐纳二极管与浪涌电流规格 Zener Diodes with Surge Current Specification
|
||
BZD27C33P-HE3-08
|
VISHAY | 功能相似 | DO-219AB |
Zener Diode, 33V V(Z), 6.06%, 0.8W, Silicon, Unidirectional, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
|
BZD27C33P-HE3-08
|
Vishay Intertechnology | 功能相似 | DO-219AB |
Zener Diode, 33V V(Z), 6.06%, 0.8W, Silicon, Unidirectional, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2Pin
|
||
|
BZD27C33PR2
|
Taiwan Semiconductor | 功能相似 |
Zener Diode, 33V V(Z), 6.06%, 1W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
|
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