Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 18 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 120 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/Continuous drain current (Ids): 33A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 1730pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 120W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: TO-263-5
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-5
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: MOSFET with temperature sensor
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
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