Technical parameters/rated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V
Technical parameters/rated power (Max): 1.35 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR33,115
|
NXP | 功能相似 | SOT-89-3 |
通用 PNP 晶体管,Nexperia ### 双极晶体管,Nexperia
|
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