Technical parameters/frequency: 1.3 GHz
Technical parameters/output power: 200 W
Technical parameters/gain: 17.5 dB
Technical parameters/test current: 100 mA
Technical parameters/Input capacitance (Ciss): 78pF @32V(Vds)
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 32 V
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-1121
External dimensions/packaging: SOT-1121
Physical parameters/operating temperature: -65℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF647PSJ
|
NXP | 完全替代 | Surface Mount |
RF Power Transistor, 0 to 1.4GHz, 200W, 18dB, 32V, LDMOS, SOT1121B
|
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