Technical parameters/power supply voltage (DC): 28.0 V
Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 15.0 A
Technical parameters/leakage source breakdown voltage: 65.0V (min)
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/output power: 150 W
Technical parameters/gain: 10.0 dB
Encapsulation parameters/installation method: Flange
Encapsulation parameters/Encapsulation: SOT-262
External dimensions/packaging: SOT-262
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF246B
|
Ampleon USA | 类似代替 | CDFM-8 |
甚高频推挽功率MOS晶体管 VHF push-pull power MOS transistor
|
||
MRF275G
|
M/A-Com | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
Motorola | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
M/A-Com | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
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