Technical parameters/power supply voltage (DC): 26.0 V
Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 2.20 A
Technical parameters/drain source resistance: 1.05 Ω
Technical parameters/threshold voltage: 5 V
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/rise time: 93 ns
Technical parameters/output power: 10 W
Technical parameters/gain: 16.0 dB
Technical parameters/descent time: 72 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-538
External dimensions/length: 5.66 mm
External dimensions/width: 4.14 mm
External dimensions/height: 2.95 mm
External dimensions/packaging: SOT-538
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF1043,112
|
NXP | 类似代替 | SOT-538 |
Trans RF MOSFET N-CH 65V 2.2A 3Pin CDIP SMD Bulk
|
||
BLF1043,112
|
Ampleon USA | 类似代替 | CDIP-538 |
Trans RF MOSFET N-CH 65V 2.2A 3Pin CDIP SMD Bulk
|
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