Technical parameters/frequency: 9000 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 17dB ~ 10dB
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 6V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFS25A
|
NXP | 类似代替 | SOT-323-3 |
NXP ### 双极性晶体管,NXP Semiconductors
|
||
BFS25A,115
|
NXP | 类似代替 | SOT-323-3 |
NXP BFS25A,115 , NPN 晶体管, 7 mA, Vce=5 V, HFE:50, 5000 MHz, 3引脚 UMT封装
|
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