Technical parameters/polarity: NPN
Technical parameters/dissipated power: 135 mW
Technical parameters/breakdown voltage (collector emitter): 4.5 V
Technical parameters/gain: 22 dB
Technical parameters/maximum allowable collector current: 0.03A
Technical parameters/minimum current amplification factor (hFE): 50 @25mA, 2V
Technical parameters/rated power (Max): 135 mW
Technical parameters/dissipated power (Max): 135 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-343
External dimensions/packaging: SOT-343
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFU630F,115
|
NXP | 类似代替 | SOT-343 |
晶体管 双极-射频, NPN, 5.5 V, 21 GHz, 200 mW, 30 mA, 90 hFE
|
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