Technical parameters/rated voltage (DC): 15.0 V
Technical parameters/rated current: 100 mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFG135
|
Philips | 类似代替 |
NXP BFG135 晶体管 双极-射频, NPN, 15 V, 7 GHz, 1 W, 150 mA, 130 hFE
|
|||
BFG35,115
|
NXP | 功能相似 | TO-261-4 |
NXP BFG35,115 晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE
|
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