Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 70 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/rated power (Max): 70 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 70000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Poinn | 功能相似 |
STMICROELECTRONICS BDX34C 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
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Continental Device | 功能相似 | SFM |
STMICROELECTRONICS BDX34C 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
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Rochester | 功能相似 | TO-220 |
STMICROELECTRONICS BDX34C 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
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BDX34C
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS BDX34C 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
|
||
BDX34C
|
Fairchild | 功能相似 | TO-220-3 |
STMICROELECTRONICS BDX34C 单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
|
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