Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 10.0 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6388G
|
NXP | 功能相似 | TO-220 |
ON SEMICONDUCTOR 2N6388G 单晶体管 双极, NPN, 80 V, 2 W, 10 A, 100 hFE 新
|
||
BDX33B
|
Motorola | 功能相似 | TO-220 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
BDX33B
|
ON Semiconductor | 功能相似 | TO-220-3 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
BDX33B
|
GE | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
|||
BDX33B
|
Multicomp | 功能相似 | TO-220 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
BDX33BG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR BDX33BG 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 10 A, 750 hFE
|
||
TIP131
|
ON Semiconductor | 类似代替 | TO-220-3 |
MULTICOMP TIP131 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 8 A, 1000 hFE
|
||
|
|
Inchange Semiconductor | 类似代替 |
MULTICOMP TIP131 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 8 A, 1000 hFE
|
|||
TIP131
|
Comset Semiconductors | 类似代替 |
MULTICOMP TIP131 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 8 A, 1000 hFE
|
|||
|
|
Poinn | 类似代替 |
MULTICOMP TIP131 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 8 A, 1000 hFE
|
|||
TIP131
|
Continental Device | 类似代替 | SFM |
MULTICOMP TIP131 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 8 A, 1000 hFE
|
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