Technical parameters/frequency: 1.5 MHz
Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 90 W
Technical parameters/gain bandwidth product: 1.5 MHz
Technical parameters/collector breakdown voltage: 80.0 V
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 15 @4A, 2V
Technical parameters/rated power (Max): 90 W
Technical parameters/DC current gain (hFE): 30
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.83 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD809
|
ON Semiconductor | 功能相似 | TO-220 |
塑料大功率硅晶体管 Plastic High Power Silicon Transistor
|
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