Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 40 @1A, 4V
Technical parameters/rated power (Max): 3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-218-3
External dimensions/packaging: TO-218-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD245
|
Bourns J.W. Miller | 功能相似 | SOT-93 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
||
D45C8
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
||
D45C8
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
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