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Model BD250A-S
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) 60V 25A PNP
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Brand: Bourns J.W. Miller
Packaging TO-218-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2491) Minimum order quantity(1)
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Technical parameters/polarity: PNP

Technical parameters/dissipated power: 125 W

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/maximum allowable collector current: 25A

Technical parameters/minimum current amplification factor (hFE): 10 @15A, 4V

Technical parameters/rated power (Max): 3 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 125000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-218-3

External dimensions/length: 15.2 mm

External dimensions/width: 4.9 mm

External dimensions/height: 12.2 mm

External dimensions/packaging: TO-218-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BD250B-S BD250B-S Bourns J.W. Miller 类似代替 TO-218-3
SOT-93 PNP 80V 25A
PDF
TIP36AG TIP36AG ON Semiconductor 功能相似 TO-247-3
ON SEMICONDUCTOR TIP36AG 双极晶体管
PDF

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