Technical parameters/number of pins: 3
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 15 @1A, 4V
Technical parameters/rated power (Max): 30 W
Technical parameters/DC current gain (hFE): 15
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 30000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD440
|
CJ | 功能相似 | TO-126 |
Plastic Medium Power Silicon PNP Transistor
|
||
BD440
|
ST Microelectronics | 功能相似 | SOT-32 |
Plastic Medium Power Silicon PNP Transistor
|
||
BD440
|
ON Semiconductor | 功能相似 | TO-126-3 |
Plastic Medium Power Silicon PNP Transistor
|
||
|
|
Bourns J.W. Miller | 功能相似 | TO-220 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
TIP132
|
Multicomp | 功能相似 | TO-220 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
TIP132
|
ON Semiconductor | 功能相似 | TO-220-3 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
TIP132
|
ST Microelectronics | 功能相似 | TO-220-3 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
TIP132
|
Inchange Semiconductor | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review