Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 63 @150mA, 2V
Technical parameters/rated power (Max): 1.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD13610STU
|
Fairchild | 完全替代 | TO-126-3 |
ON Semiconductor BD13610STU , PNP 晶体管, 1.5 A, Vce=45 V, HFE:25, 3引脚 TO-126封装
|
||
BD13610STU
|
ON Semiconductor | 完全替代 | TO-126-3 |
ON Semiconductor BD13610STU , PNP 晶体管, 1.5 A, Vce=45 V, HFE:25, 3引脚 TO-126封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review