Technical parameters/frequency: 145 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX51-16,115
|
NXP | 类似代替 | SOT-89-3 |
NXP BCX51-16,115 单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 100 hFE
|
||
BCX52-10,115
|
NXP | 类似代替 | SOT-89-3 |
通用 PNP 晶体管,Nexperia ### 双极晶体管,Nexperia
|
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