Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847B,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BC847B,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 200 hFE
|
||
BCW72,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BCW72,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 150 hFE
|
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