Technical parameters/rated voltage (DC): 32.0 V
Technical parameters/rated current: 100 mA
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/minimum current amplification factor (hFE): 380 @2mA, 5V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diotec Semiconductor | 类似代替 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BCW60D
|
Samsung | 类似代替 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
|
|
ON Semiconductor | 类似代替 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
|
|
Vishay Semiconductor | 类似代替 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60D
|
Allegro MicroSystems | 类似代替 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BCW60D
|
Philips | 类似代替 | TO-236 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60D
|
Fairchild | 类似代替 | SOT-23-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60D
|
NXP | 类似代替 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
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